s p january 2011 p gp0380a- pr e SPGP0380A ver : preliminary_2 ( semihow power switch ) e liminary ? variable frequency operation ? low start-up current(typ.100ua ) ? pulse by pulse current limiting ? over current protection ? over voltage protection (min. 20) ? features application ? smps for stb, svr, dvd & dvcd ? smps for printer, facsimile & scanner ? adaptor ? ? under voltage lockout ? internal high voltage sense fet ? auto-restart mode ? frequency modulation for low emi ? advanced burst-mode operation the semihow power switch product family is specially desi gned for an off-line smps with minimal external components. the semihow power switch consists of a high voltage power sensefet and a current mode pwm ic. it has a basic platform well suited for the cost effective design in either a flyback converter description internal block diagram semihow rev.plimilary january 2011
s p absolute maximum ratings p gp0380a- pr e symbol parameter value units v dss drain-source voltage 800 v i d drain current ? continuous (t c = 25 ) 3.0 a drain current ? continuous ( t c = 100 ) 2.1 a ta=25 ? c, unless otherwise specified e liminary ( c ) a v gs gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 245 mj v cc(max) maximum supply voltage 20 v v fb analog input voltage range -0.3 to v sd v p power dissipation (t c = 25 ) 100 w p d - derate above 25 0.8 w/ t j operating junction temperature +160 t a operating ambient temperature -25 to +85 t stg storage temperature range -55 to +150 notes : 1 repetitive rating : pulse width limited by maximum junction temperature 1 . repetitive rating : pulse width limited by maximum junction temperature 2. l=51mh, i as =3.0a, v dd =50v, r g =25 ? , starting t j =25 ? c semihow rev.plimilary january 2011
s p electrical characteristics ( sensefet part ) p gp0380a- pr e symbol parameter test conditions min typ max units r ds(on) static drain-source on-resistance v gs = 10 v, i d = 1.5 a -- 4.0 5.0 ? on characteristics ta=25 ? c, unless otherwise specified e liminary bv dss drain-source breakdown voltage v gs = 0 v, i d = 50 ? 800 -- -- v i dss zero gate voltage drain current v ds = 800 v, v gs = 0 v -- -- 250 ? v ds = 640 v, t c = 125 -- -- 1000 ? off characteristics c iss input capacitance -- 650 850 ? dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz 650 850 ? ? c rss reverse transfer capacitance -- 12 15.5 ? t d(on) turn-on time v ds = 400 v, i d = 3.0 a, r g = 25 ? -- 20 -- ? t r turn-on rise time -- 20 -- ? t d( ff) turn - off delay time -- 80 -- ? switching characteristics (note 4,5) t d( o ff) turn off delay time 80 ? ? q g total gate charge v ds = 400v, i d = 3.0 a, v gs = 10 v (note 4,5) -- 16 21 nc q gs gate-source charge -- 3.5 -- nc q gd gate-drain charge -- 6.5 -- nc notes : 1. pulse test : pulse width 300 s, duty cycle 2% 2. r s 1 ? semihow rev.plimilary january 2011
s p electrical characteristics ( control part ) p gp0380a- pr e symbol parameter test conditions min typ max units v start start threshold voltage v fb = gnd 14 15 16 v v st th h ld v lt v gnd 84 9 96 9 uvlo section ta=25 ? c, unless otherwise specified e liminary v stop st op th res h o ld v o lt age v fb = gnd 8 . 4 9 9 . 6 v khz -- frequency change with temperature (note 2) -25 c ? ta ? +85 c-- ? 5 ? 10 % d max maximum duty cycle 73 77 82 % oscillator section i fb feedback source current ta=25 c, 0v6.5v 5.4 6 6.6 v i delay shutdown delay current ta=25 c, 5v ? vfb ? v sd 456 ma feedback section reference section v ref reference output voltage (note 1) ta=25 c 4.8 5 5.2 v vref/ ? t temperature stability (note 1 , 2) -25 c ? ta ? +85 c--0.30.6mv/ c i over peak current limit max. inductor current 1.62 2.0 2.38 a protection section v ovp over voltage protection v cc ?? 20v 20 -- 23 v thermal shutdown temperature t sd thermal shutdown temperature (tj) (note 1) -- 140 160 -- c protection section i start start-up current v cc = 14v -- 100 170 ?? i op operating supply current (control part only) v cc ?? 20v -- 3 6 ma notes : 1. these parameters, although guaranteed, are not 100% tested in production 2. these parameters, although guaranteed, are tested in eds(water test) process semihow rev.plimilary january 2011
s p (SPGP0380A) typical characteristics ( sensefet part ) p gp0380a- pr e 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.0 v 5.5 v 5.0 v bottom : 4.5 v current [a] 1 10 n current [a] 150 o c e liminary figure 1. on region characteristics figure 2. transfer characteristics 10 0 * notes : 1. 300us pulse test 2. t c = 25 o c i d , drain v ds , drain-source voltage [v] 246810 0.1 -25 o c 25 o c * notes : 1. v ds = 30v 2. 300us pulse test v gs , gate-source voltage [v] i d , drai 3 4 5 6 7 v gs = 10v d s(on) [ ? ], c e on-resistance 1 10 s e drain current [a] figure 3. on resistance variation vs drain current and gate voltage figure 4. body diode forward voltage v ariation with source current 0123456 0 1 2 3 v gs = 20v ? note : t j = 25 o c r d drain-sour c i d , drain current [a] 0.4 0.6 0.8 1.0 0.1 25 o c * notes : 1. v gs = 0v 2. 300us pulse test v sd , source-drain voltage [v] i dr , rever s 150 o c drain current and gate voltage and temperature 6 8 10 12 v ds = 400v v ds = 160v v ds = 640v s ource voltage [v] 600 800 1000 1200 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd c c iss t ances [pf] figure 5. capacitance characteristics fi gure 6. gate charge characteristics 0 4 8 12 16 20 0 2 4 * note : i d = 3.0a v gs , gate- s q g , total gate charge [nc] 10 -1 10 0 10 1 0 200 400 * note ; 1. v gs = 0 v 2. f = 1 mhz c rss c oss capaci t v ds , drain-source voltage [v] semihow rev.plimilary january 2011
s p (SPGP0380A) typical characteristics ( sensefet part ) (continued) p gp0380a- pr e 1.0 1.1 1.2 (normalized) breakdown voltage 1.5 2.0 2.5 (normalized) c e on-resistance e liminary -100 -50 0 50 100 150 200 0.8 0.9 ?? note : 1. v gs = 0 v 2. i d = 250 ? a bv dss , drain-source t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 ? note : 1. v gs = 10 v 2. i d = 1.5 a r ds(on) , drain-sour c t j , junction temperature [ o c] figure 7. breakdown voltage variation vs temperature figure 8. on-resistance variation vs temperature 1.5 2.0 2.5 3.0 n current [a] vs temperature vs temperature 10 0 10 1 100 ms dc 10 ms 1 ms operation in this area is limited by r ds(on) current [a] 25 50 75 100 125 150 0.0 0.5 1.0 i d , drai n t c , case temperature [ o c] figure 9. maximum safe operating area figure 10. maximum drain current vs case tem p erature 10 0 10 1 10 2 10 3 10 -2 10 -1 * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain v ds , drain-source voltage [v] p 10 -1 10 0 * n otes : 1 . z ? jc (t) = 1.25 o c/w max. 2 . d uty f a cto r, d = t 1 /t 2 3 . t jm - t c = p dm * z ? jc (t) d=0.5 0.2 0.05 0.1 r mal response figure 11. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 single pulse 0.02 0.01 z ? jc (t), the r t 1 , s quare w ave p ulse d uration [sec] t 2 t 1 p dm semihow rev.plimilary january 2011
s p typical performance characteristics ( control part ) (continued) (these characteristic graphs are normalized at ta=25 ? c) p gp0380a- pr e 0.90 0.95 1.00 1.05 1.10 1.15 1.20 fosc 0.90 0.95 1.00 1.05 1.10 1.15 1.20 ifb e liminary figure 1. operating frequency figure 2. feedback source current -25 0 25 50 75 100 125 150 0.80 0.85 -25 0 25 50 75 100 125 150 0.80 0.85 1.15 1.20 1.8 2.0 -25 0 25 50 75 100 125 150 0.80 0.85 0.90 0.95 1.00 1.05 1.10 iop figure 3 operating supply current figure 4 start up current -25 0 25 50 75 100 125 150 0.4 0.6 0.8 1.0 1.2 1.4 1.6 istart 0.95 1.00 1.05 1.10 1.15 1.20 vstart 0.95 1.00 1.05 1.10 1.15 1.20 vstop figure 3 . operating supply current figure 4 . start up current -25 0 25 50 75 100 125 150 0.80 0.85 0.90 -25 0 25 50 75 100 125 150 0.80 0.85 0.90 1.20 figure 5. start threshold voltage figure 6. stop threshold voltage -25 0 25 50 75 100 125 150 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 vovp semihow rev.plimilary january 2011 figure 7. over voltage protection
s p package dimension p gp0380a- pr e e liminary semihow rev.plimilary january 2011
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